NTB5605PT4G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTB5605PT4G
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT P-Channel number of channels:1 88 W -60 V Continuous Drain Current (ID):18.5 A 13 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -60 V |
| Length | 10.29 mm |
| Width | 9.65 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 4.83 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -18.5 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 88 W |
| Power Dissipation | 88 W |
| Threshold Voltage | -1.5 V |
| Number of Channels | 1 |
| Input capacitance | 1.19 nF |
| Continuous Drain Current (ID) | 18.5 A |
| Rds On Max | 140 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 12.5 ns |
| Turn-Off Delay Time | 29 ns |
| Element Configuration | Single |
| Fall Time | 75 ns |
| Rise Time | 122 ns |
| Gate Charge | 13 nC |
| Drain to Source Resistance | 120 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1 V |
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